unisonic technologies co., ltd 2sc2688 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r204-023,c npn silicon transistor ? description the utc 2sc2688 is designed for use in color tv chroma output circuits. ? features * high electrostatic-discharge-resistance. esdr: 1000v typ. (e-b reverse bias, c=2300pf) * low c re , high f t c re 3.0 pf (v cb =30v) f t 50mhz (v ce =30v, i e =-10ma) ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 2sc2688l-x-t60-k 2SC2688G-X-T60-K to-126 e c b bulk 2sc2688l-x-t6c-k 2sc2688g-x-t6c-k to-126c e c b bulk
2sc2688 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r204-023,c ? absolute maximum rating parameter symbol ratings unit collector to base voltage v cbo 300 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 5.0 v collector current i c 200 ma ta=25 1.25 w total power dissipation t c =25 p d 10 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 ) parameter symbol test conditions min typ max unit collector saturation voltage v ce(sat) i c =20ma, i b =5.0ma 1.5 v collector cutoff current i cbo v cb =200v, i e =0 100 na emitter cutoff current i ebo v eb =5.0v, i c =0 100 na dc current gain h fe v ce =10v, i c =10ma (note 1 ) 40 80 250 gain bandwidth product f t v ce =30v, i e =-10ma 50 80 mhz feedback capacitance c re v cb =30v, i e =0, f=1.0mhz 3 pf note 1. * pulsed pw 350s, duty cycle 2% ? classification of h fe rank n m l k range 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 250
2sc2688 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r204-023,c ? burnout test circuit by discharge of capacitor
2sc2688 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r204-023,c ? typical characteristics (ta=25 ) total power dissipation, p d (w) total power dissipation, p d (w) collector current, i c (ma) collector current, i c (ma) 0 0.4 0.8 1.2 base to emitte r voltage, v be (v) 10 20 50 60 collector current vs. base to emitter voltage 70 30 v ce =10v 0.2 0.6 1.0 1.4 40 0.1 10 100 collector current, i c (ma) 1 5 100 dc current gain vs. collector current 10 0.5 5 50 1000 50 1500 200 v ce =10v
2sc2688 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r204-023,c ? typical characteristics base saturation voltage, v be (sat) (v) collector saturation voltage, v ce (sat) (v) gain bandwidth product, f t (mhz) 110 collector to base voltage, v cb (v) 1 feedback capacitance vs.collector to base voltage feedback capacitance, c re (pf) 5 5100 10 50 i e =0 f=1mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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